STMicroelectronics STP20NM60A
The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics.DESCRIPTION
The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that ofwww.DataSheet4U.com similar competition’s products. TO-220FP INTERNAL SCHEMATIC DIAGRAMAPPLICATIONS
s SPECIFICALLY DESIGNED FOR ADAPTORS IN QUASI-RESONANT CONFIGURATION ORDER CODES PART NUMBER STB20NM60A-1 STP20NM60A STF20NM60A MARKING B20NM60A P20NM60A F20NM60A PACKAGE I2PAK TO-220 TO-220FP PACKAGING TUBE TUBE TUBE March 2004 1/12 STB20NM60A-1/STP20NM60A/STF20NM60AABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value STB20NM60A-1 STP20NM60A VGS ID ID IDM ( ) PTOT dv/dt (1) VISO Tstg Tj Gate-source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Winthstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature -–55 to 150 20 12.6 80 192 1.2 15 2500 ±30 20(*) 12.6(*) 80(*) 45 0.36...