STMicroelectronics STP210NF02
N-CHANNEL POWER MOSFET
STP210NF02 Specifications
- Package : TO-220
- Breakdown Voltage : 20V
- Drain-Source Resistance : 3.2mΩ
- Terminals : 3
- Rise Time : 360ns
- Fall Time : 110ns
- Max Power Dissipation : 300W
- Max Operating Temp : 175°C
- Min Operating Temp : -55°C
Source:
Octopart
| Part No. | STP210NF02 |
|---|---|
| Datasheet | STP210NF02 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. D²PAK TO-263 I²PAK TO-262 3 1 2 TO-220APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS INTERNAL SCHEMATIC DIAGRAM Ordering Information SALES TYPE STB210NF02 STB210NF02T4 STP210NF02 STB210NF02-1 MARKING B210NF02 B210NF02 P210NF02 B210NF02 PACKAGE D2PAK D2PAK TO-220 I2PAK PACKAGING TUBE TAPE & REEL TUBE TUBEABSOLUTE MAXIMUM RATINGS
Symbol Parameter VDS Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) VDGR VGS Gate- source Voltage Drain Current (continuous) at TC = 25°C ID(**) Drain Current (continuous) at TC = 100°C ID IDM(●) Drain Current (pulsed) Ptot T...
