STMicroelectronics STP22NE10L
This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.| Part No. | STP22NE10L |
|---|---|
| Datasheet | STP22NE10L Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL STripFET POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symb ol V DS V DGR VGS ID ID I DM (●) P tot E AS ( 1 ) T st g Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 oC Drain Current (continuous) at Tc = 100 o C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature o Value 100 100 ± 20 22 14 88 90 0.6 250 -65 to 175 175 ( 1) starting Tj = 25 oC, ID =22A , VDD = 50V Unit V V V A A A W W /o C mJ o o C C (●) Pulse width limited by safe operating area November 1999 1/8 STP22NE10L THERMAL DATA R thj -case R thj -amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature F or Soldering Purpos...
