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STP22NM60FP - N-CHANNEL Power MOSFET

General Description

This improved version of MDmesh™ which is based on Multiple Drain process represents the new benchmark in high voltage MOSFETs.

The resulting product exhibits even lower on-resistance, impressively high dv/dt and excellent avalanche characteristics.

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STP22NM60 - STP22NM60FP STB22NM60 - STB22NM60-1 N-CHANNEL 600V - 0.19 Ω - 22A TO-220/FP/D2PAK/I2PAK MDmesh™Power MOSFET ADVANCED DATA TYPE VDSS RDS(on) Rds(on)*Qg ID STP22NM60 STP22NM60FP STB22NM60 STB22NM60-1 600 V 600 V 600 V 600 V < 0.25 Ω < 0.25 Ω < 0.25 Ω < 0.25 Ω 7.6 Ω*nC 7.6 Ω*nC 7.6 Ω*nC 7.6 Ω*nC 22 A 22 A 22 A 22 A s TYPICAL RDS(on) = 0.19Ω s HIGH dv/dt AND AVALANCHE CAPABILITIES s 100% AVALANCHE TESTED s LOW INPUT CAPACITANCE AND GATE CHARGE s LOW GATE INPUT RESISTANCE DESCRIPTION This improved version of MDmesh™ which is based on Multiple Drain process represents the new benchmark in high voltage MOSFETs. The resulting product exhibits even lower on-resistance, impressively high dv/dt and excellent avalanche characteristics.