STP23N80K5 Datasheet | STMicroelectronics

N-channel 800 V, 0.23 Ω typ., 16 A MDmesh™ K5 Power MOSFET in a TO-220 package - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max. ID PTOT STP23N80K5 800 V 0.28 Ω 16 A 190 W - Industry’s lowest RDS(on) x area - Industry’s best figure of merit (Fo M) - Ultra low gate charge - 100% avalanche tested - Zener-protected Applications - Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Order code STP23N80K5 Table 1: Device summary Marking Package 23N80K5 TO-220 Packing Tube October 2015 Doc ID028451 Rev 1 This is information on a product in full production. 1/13...