STMicroelectronics STP23NM60N
This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.| Part No. | STP23NM60N |
|---|---|
| Datasheet | STP23NM60N Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Type VDSS (@Tjmax) RDS(on) max ID 1 3 3 12 STB23NM60N STI23NM60N STF23NM60N STP23NM60N STW23NM60N 1. Limited only by maximum temperature allowed●
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● 19 A 19 A 650 V 0.180 Ω 19 A (1) D²PAK 2 1 3 I²PAK 19 A 19 A 3 1 2 TO-247 3 1 2 100% avalanche tested Low input capacitance and gate charge Low gate input resistance TO-220 TO-220FP Figure 1. Internal schematic diagram Application
● Switching applications
DESCRIPTION
It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Order codes Marking 23NM60N 23NM60N 23NM60N 23NM60N 23NM60N Package D²PAK I²PAK TO-220FP TO-220 TO-247 Packaging Tape and reel Tube Tube Tube Tube STB23NM60N STI23NM60N STF23NM60N STP23NM60N STW23NM60N March 2008 Rev 3 1/19 19 Contents STB23NM60N-STF/I23NM60N-STP23NM60N-STW23NM60N Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
