STMicroelectronics STP240N10F7
This N-channel Power MOSFET utilizes the STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.| Part No. | STP240N10F7 |
|---|---|
| Datasheet | STP240N10F7 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel MOSFET |
| Buy | Stock & Price |
FEATURES
Order code STP240N10F7 VDS RDS(on)max. ID 100 V 3.2 mΩ 110 A● Ultra low on-resistance
● 100% avalanche tested
APPLICATIONS
● High current switching applications Figure 1. Internal schematic diagram ' 7$%DESCRIPTION
* 6 $0 Y Order code STP240N10F7 Table 1. Device summary Marking Package 240N10F7 TO-220 Packaging Tube July 2014 This is information on a product in full production. DocID023934 Rev 3 1/13 Contents Contents STP240N10F7 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
