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STP240N10F7 - N-channel MOSFET

General Description

This N-channel Power MOSFET utilizes the STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

 6  $0Y Order code STP240N10F7 T

Key Features

  • Order code STP240N10F7 VDS RDS(on)max. ID 100 V 3.2 mΩ 110 A.
  • Ultra low on-resistance.
  • 100% avalanche tested.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STP240N10F7 N-channel 100 V, 2.85 mΩ typ., 110 A STripFET™ F7 Power MOSFET in a TO-220 package Datasheet - production data TAB 3 2 1 TO-220 Features Order code STP240N10F7 VDS RDS(on)max. ID 100 V 3.2 mΩ 110 A • Ultra low on-resistance • 100% avalanche tested Applications • High current switching applications Figure 1. Internal schematic diagram ' 7$% Description This N-channel Power MOSFET utilizes the STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. *  6  $0Y Order code STP240N10F7 Table 1.