STMicroelectronics STP24N60DM2
300V 18A N-Channel Power MOSFET
| Part No. | STP24N60DM2 |
|---|---|
| Datasheet | STP24N60DM2 Download |
| Manufacturer |  STMicroelectronics |
| Description | 300V 18A N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code STB24N60DM2 STP24N60DM2 STW24N60DM2 VDS 600 V RDS(on) max. 200 mΩ● Fast-recovery body diode
● Extremely low gate charge and input capacitance
● Low on-resistance
● 100% avalanche tested
● Extremely high dv/dt ruggedness
● Zener-protected ID 18 A G(1)
APPLICATIONS
● Switching applicationsDESCRIPTION
S(3) AM01476v1_tab These high-voltage N-channel Power MOSFET are part of the MDmesh DM2 fast‑recovery diode series. They offer very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering them suitable for the most demanding highefficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Product status link STB24N60DM2 STP24N60DM2 STW24N60DM2 DS10027 - Rev 4 - August 2025 For further information, contact your local STMicroelectronics sales office. STB24N60DM2, STP24N60DM2, STW24N60DM2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage...
