STMicroelectronics STP24NF10
This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.| Part No. | STP24NF10 |
|---|---|
| Datasheet | STP24NF10 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Type VDS RDS(on) max. ID STP24NF10 100 V 60 mΩ 26 A● Exceptional dv/dt capability
● 100% avalanche tested
● Low gate charge D(2, TAB)
APPLICATIONS
● Switching applications G(1) S(3) AM01475v1_noZenDESCRIPTION
Product status link STP24NF10 Product summary Order code STP24NF10 Marking P24NF10 Package TO-220 Packing Tube DS1936 - Rev 8 - February 2022 For further information contact your local STMicroelectronics sales office. 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VDGR Drain-gate voltage (RGS = 20 kΩ) VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C EAS(2) Single-pulse avalanche energy dv/dt(3) Peak diode recovery voltage slope Tstg Storage temperature range TJ Operating junction temperature range 1. Pulse width limited by safe operating area. 2. Starting TJ = 25 °C, ID = 12 A, VDD = 30 V. 3.
