STMicroelectronics STP25N018M9
This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure.| Part No. | STP25N018M9 |
|---|---|
| Datasheet | STP25N018M9 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel 250V 56A Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS STP25N018M9 250 V● Very low FOM (RDS(on)●Qg)
● Higher dv/dt capability
● Excellent switching performance
● Easy to drive
● 100% avalanche tested Application RDS(on) max. 18 mΩ ID 56 A G(1) S(3)
● AC-DC converters
● DC-DC converters
● Microinverter AM01475v1_noZen
DESCRIPTION
The resulting product has one of the lower on-resistance and reduced gate charge values, among all silicon based fast switching super-junction Power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency. Product status link STP25N018M9 Product summary Order code STP25N018M9 Marking 25N018M9 Package Packing TO‑220 Tube DS14761 - Rev 2 - January 2025 For further information, contact your local STMicroelectronics sales office. STP25N018M9 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID(1) Drain current (continuous) at...
