STMicroelectronics STP25NM60N
This series of devices is realized with the second generation of MDmesh™ technology. This revolutionary MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.| Part No. | STP25NM60N |
|---|---|
| Datasheet | STP25NM60N Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Type STB25NM60N STB25NM60N-1 STF25NM60N STP25NM60N STW25NM60N VDSS (@Tjmax) 650 V 650 V 650 V 650 V 650 V RDS(on) max < 0.160 Ω < 0.160 Ω < 0.160 Ω < 0.160 Ω < 0.160 Ω ID 3 3 1 2 21 A 21 A 21 A(1) 21 A 21 A 1 2 TO-220FP 3 1 TO-220 D²PAK 3 12 2 1 3 1. Limited only by maximum temperature allowed●
●
● 100% avalanche tested Low input capacitance and gate charge Low gate input resistance I²PAK TO-247 Figure 1. Internal schematic diagram Application
● Switching applications
DESCRIPTION
It is therefore suitable for the most demanding high efficiency converters Table 1. Device summary Marking B25NM60N B25NM60N F25NM60N P25NM60N W25NM60N Package D²PAK I²PAK TO-220FP TO-220 TO-247 Packaging Tape and reel Tube Tube Tube Tube Order codes STB25NM60N STB25NM60N-1 STF25NM60N STP25NM60N STW25NM60N June 2008 Rev 12 1/18 18 Contents STB25NM60Nx - STF25NM60N - STP25NM60N - STW25NM60N Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
