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STP25NM60ND Datasheet N-channel MOSFET

Manufacturer: STMicroelectronics

Overview: STB25NM60ND-STI25NM60ND STF/P25NM60ND-STW25NM60ND N-channel 600 V - 0.

General Description

The FDmesh™ II series belongs to the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a new vertical structure to the pany's strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode.It is therefore strongly remended for bridge topologies, in ZVS phase-shift converters.

Table 1.

Key Features

  • Type www. DataSheet4U. com VDSS @ TJMAX RDS(on) max ID 3 3 1 2 3 1 2 1 STB25NM60ND STI25NM60ND STF25NM60ND STP25NM60ND STW25NM60ND 650 V 0.16 Ω 21 A 21 A 21 A(1) 21 A 21 A TO-220 D2PAK TO-220FP 1. Limited only by maximum temperature allowed.
  • 3 12 2 1 3 The worldwide best RDS(on).
  • area amongst the fast recovery diode devices 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Extremely high dv/dt and avalanche capab.

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