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STP25NM60ND Datasheet PDF

STMicroelectronics STP25NM60ND

The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode.It is therefore strongly recommended for bridge topologies, in ZVS phase-shift converters.
Part No. STP25NM60ND
Datasheet STP25NM60ND Download
Manufacturer
STMicroelectronics
Description N-channel MOSFET
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STP25NM60ND datasheet page 1 preview

FEATURES

Type VDSS @ TJMAX RDS(on) max ID 3 3 1 2 3 1 2 1 STB25NM60ND STI25NM60ND STF25NM60ND STP25NM60ND STW25NM60ND 650 V 0.16 Ω 21 A 21 A 21 A(1) 21 A 21 A TO-220 D2PAK TO-220FP 1. Limited only by maximum temperature allowed
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● 3 12 2 1 3 The worldwide best RDS(on)*area amongst the fast recovery diode devices 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Extremely high dv/dt and avalanche capabilities Figure 1. I2PAK TO-247 Internal schematic diagram Application
● Switching applications

DESCRIPTION

Table 1. Device summary Marking 25NM60ND 25NM60ND 25NM60ND 25NM60ND 25NM60ND Rev 3 Package D²PAK I²PAK TO-220FP TO-220 TO-247 Packaging Tape and reel Tube Tube Tube Tube 1/18 18 Order codes STB25NM60ND STI25NM60ND STF25NM60ND STP25NM60ND STW25NM60ND April 2008 Contents STP/F25NM60ND - STB25NM60ND - STI25NM60ND - STW25NM60ND Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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