STP260N4F7 Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. S(3) Order code STP260N4F7 AM01475v1_Tab Table 1: Device summary Marking Package 260N4F7 TO-220 Packaging Tube June 2016 DocID028290 Rev 2 This is information on a product in...
STP260N4F7 Key Features
- Among the lowest RDS(on) on the market
- Excellent FoM (figure of merit)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness