STP260N4F7 Datasheet | STMicroelectronics

N-channel 40 V, 1.8 mΩ typ., 120 A STrip FET™ F7 Power MOSFET in a TO-220 package - production data Features Order code STP260N4F7 VDS 40 V RDS(on)max 2.2 mΩ ID 120 A PTOT 235 W Figure 1: Internal schematic diagram D(2, TAB) G(1) Features - Among the lowest RDS(on) on the market - Excellent Fo M (figure of merit) - Low Crss/Ciss ratio for EMI immunity - High avalanche ruggedness Applications - Switching applications Description This N-channel Power MOSFET utilizes STrip FET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. S(3) Order code STP260N4F7 AM01475v1_Tab Table 1: Device summary Marking Package 260N4F7 TO-220 Packaging Tube June...