STMicroelectronics STP260N4F7
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.| Part No. | STP260N4F7 |
|---|---|
| Datasheet | STP260N4F7 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code STP260N4F7 VDS 40 V RDS(on)max 2.2 mΩ ID 120 A PTOT 235 W Figure 1: Internal schematic diagram D(2, TAB) G(1)FEATURES
● Among the lowest RDS(on) on the market● Excellent FoM (figure of merit)
● Low Crss/Ciss ratio for EMI immunity
● High avalanche ruggedness
APPLICATIONS
● Switching applicationsDESCRIPTION
S(3) Order code STP260N4F7 AM01475v1_Tab Table 1: Device summary Marking Package 260N4F7 TO-220 Packaging Tube June 2016 DocID028290 Rev 2 This is information on a product in full production. 1/13 Contents Contents STP260N4F7 1 Electrical ratings .......
