STMicroelectronics STP260N6F6
The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages.| Part No. | STP260N6F6 |
|---|---|
| Datasheet | STP260N6F6 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order codes STI260N6F6 STP260N6F6 VDSS 60 V RDS(on) max ID < 0.003 Ω 120 A● Low gate charge
● Very low on-resistance
● High avalanche ruggedness Application
● Switching applications
DESCRIPTION
These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. TAB TAB 123 I²PAK 3 2 1 TO-220 Figure 1. Internal schematic diagram $ 4!" ' 3 !- V Table 1. Device summary Order codes STI260N6F6 STP260N6F6 Marking 260N6F6 Package I²PAK TO-220 Packaging Tube January 2012 Doc ID 17467 Rev 5 1/14 14 Contents Contents STI260N6F6, STP260N6F6 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
