STMicroelectronics STP265N6F6AG
This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.| Part No. | STP265N6F6AG |
|---|---|
| Datasheet | STP265N6F6AG Download |
| Manufacturer |  STMicroelectronics |
| Description | Automotive-grade N-channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code STP265N6F6AG VDS 60 V RDS(on) max 2.85 mΩ ID 180 A● AEC-Q101 qualified
● Very low on-resistance
● Very low gate charge
● High avalanche ruggedness
● Low gate drive power loss
APPLICATIONS
● Switching applicationsDESCRIPTION
S(3) Order code STP265N6F6AG AM01475v1_Tab Table 1: Device summary Marking 265N6F6 Package TO-220 Packing Tube November 2016 DocID027281 Rev 3 This is information on a product in full production. 1/13 Contents Contents STP265N6F6AG 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 TO-220 mechanical data .................................................................
