STMicroelectronics STP26N60DM6
This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series.| Part No. | STP26N60DM6 |
|---|---|
| Datasheet | STP26N60DM6 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel 600V 18A Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS RDS(on) max. ID STP26N60DM6 600 V 195 mΩ 18 A● Fast-recovery body diode
● Lower RDS(on) per area vs previous generation
● Low gate charge, input capacitance and resistance
● 100% avalanche tested
● Extremely high dv/dt ruggedness
● Zener-protected
APPLICATIONS
● Switching applicationsDESCRIPTION
Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. Product status link STP26N60DM6 Product summary Order code STP26N60DM6 Marking 26N60DM6 Package TO-220 Packing Tube DS12853 - Rev 3 - September 2020 For further information contact your local STMicroelectronics sales office. STP26N60DM6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage...
