STMicroelectronics STP26N65DM2
This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.| Part No. | STP26N65DM2 |
|---|---|
| Datasheet | STP26N65DM2 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel 650V 20A Power MOSFET |
| Buy | Stock & Price |
FEATURES
TAB TO-220 1 23 D(2, TAB) Order code VDS RDS(on) max. ID STP26N65DM2 650 V 190 mΩ 20 A● Fast-recovery body diode
● Extremely low gate charge and input capacitance
● Low on-resistance
● 100% avalanche tested
● Extremely high dv/dt ruggedness
● Zener-protected PTOT 170 W
APPLICATIONS
G(1)● Switching applications
DESCRIPTION
S(3) AM01476v1_tab Product status link STP26N65DM2 Product summary Order code STP26N65DM2 Marking 26N65DM2 Package TO-220 Packing Tube DS12621 - Rev 2 - February 2026 For further information, contact your local STMicroelectronics sales office. STP26N65DM2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total dissipation at TC = 25 °C dv/dt(2) Peak diode recovery voltage slope dv/dt(3) MOSFET dv/dt ruggedness Tstg Storage temperature range TJ Operating junction temperature range 1.
