STMicroelectronics STP26NM60ND
This is information on a product in full production.| Part No. | STP26NM60ND |
|---|---|
| Datasheet | STP26NM60ND Download |
| Manufacturer |  STMicroelectronics |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
Order codes VDS @ Tjmax RDS(on) max ID STB26NM60ND STF26NM60ND STP26NM60ND 650 V 0.175 21 A STW26NM60ND● 100% avalanche tested
● Low input capacitance and gate charge
● Low gate input resistance
● Extremely high dv/dt and avalanche capabilities ' 7$%
APPLICATIONS
● Switching applications * 6 !- VDESCRIPTION
These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. They are ideal for bridge topologies and ZVS phase-shift converters. Order codes STB26NM60ND STF26NM60ND STP26NM60ND STW26NM60ND Table 1. Device summary Marking Packages D²PAK 26NM60ND TO-220FP TO-220 TO-247 Packaging Tape and reel Tube November 2013 DocID025283 Rev 1 1/23 Contents Contents STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
