STMicroelectronics STP28N60DM2
600V 21A N-Channel Power MOSFET
| Part No. | STP28N60DM2 |
|---|---|
| Datasheet | STP28N60DM2 Download |
| Manufacturer |  STMicroelectronics |
| Description | 600V 21A N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code STB28N60DM2 STP28N60DM2 STW28N60DM2 VDS 600 V RDS(on) max. 160 mΩ● Fast-recovery body diode
● Extremely low gate charge and input capacitance
● Low on-resistance
● 100% avalanche tested
● Extremely high dv/dt ruggedness
● Zener-protected ID 21 A G(1)
APPLICATIONS
● Switching applicationsDESCRIPTION
S(3) AM01476v1_tab These high-voltage N-channel Power MOSFET are part of the MDmesh DM2 fast‑recovery diode series. They offer very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering them suitable for the most demanding highefficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Product status links STB28N60DM2 STP28N60DM2 STW28N60DM2 DS10659 - Rev 6 - September 2025 For further information, contact your local STMicroelectronics sales office. STB28N60DM2, STP28N60DM2, STW28N60DM2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (contin...
