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STP28N60M2 Datasheet PDF

STMicroelectronics STP28N60M2

600V 22A N-Channel Power MOSFET

Part No. STP28N60M2
Datasheet STP28N60M2 Download
Manufacturer
STMicroelectronics
Description 600V 22A N-Channel Power MOSFET
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STP28N60M2 datasheet page 1 preview

FEATURES

Order code STB28N60M2 STI28N60M2 STP28N60M2 STW28N60M2 VDS 600 V RDS(on) max. 150 mΩ
● Extremely low gate charge
● Excellent output capacitance (Coss) profile
● 100% avalanche tested
● Zener-protected ID 22 A

APPLICATIONS

G(1)
● Switching applications

DESCRIPTION

S(3) AM01476v1_tab These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters. Product status links STB28N60M2 STI28N60M2 STP28N60M2 STW28N60M2 DS9931 - Rev 5 - September 2025 For further information, contact your local STMicroelectronics sales office. STB28N60M2, STI28N60M2, STP28N60M2, STW28N60M2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage ID Drain current (continuous) at TC = 25 °C I...
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