STMicroelectronics STP28N65M2
650V 20A N-Channel Power MOSFET
FEATURES
TAB 3 1 D2PAK TAB 3 2 1 TO-220FP TO-220 1 2 3 TO-247 3 2 1 D(2, TAB) Order code STB28N65M2 STF28N65M2 STP28N65M2 STW28N65M2 VDS 650 V RDS(on) max. 180 mΩ● Extremely low gate charge
● Excellent output capacitance (Coss) profile
● 100% avalanche tested
● Zener-protected ID 20 A
APPLICATIONS
G(1)● Switching applications
DESCRIPTION
S(3) AM01476v1_tab These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters. Product status links STB28N65M2 STF28N65M2 STP28N65M2 STW28N65M2 DS10760 - Rev 2 - September 2025 For further information, contact your local STMicroelectronics sales office. STB28N65M2, STF28N65M2, STP28N65M2, STW28N65M2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage...