STMicroelectronics STP28NM50N
This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.| Part No. | STP28NM50N |
|---|---|
| Datasheet | STP28NM50N Download |
| Manufacturer |  STMicroelectronics |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Type STB28NM50N STF28NM50N STP28NM50N STW28NM50N●
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● VDSS (@Tjmax) RDS(on) max ID 3 1 2 3 1 2 TO-220FP 550 V < 0.158 Ω 21 A TO-220 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 1 3 1 2 3 D²PAK TO-247 Application Switching applications Figure 1. Internal schematic diagram
DESCRIPTION
These devices are made using the second generation of MDmeshTM technology. Table 1. Device summary Marking Package D²PAK TO-220FP 28NM50N TO-220 TO-247 Tube Packaging Tape and reel Order codes STB28NM50N STF28NM50N STP28NM50N STW28NM50N July 2010 Doc ID 17432 Rev 1 1/18 18 Contents STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 Electrical characteristics (curves) ............................ 7 3 4 5 6 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
