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STP2HNC60 - N-CHANNEL MOSFET

Description

The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™.

area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.

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Datasheet preview – STP2HNC60

Datasheet Details

Part number STP2HNC60
Manufacturer STMicroelectronics
File Size 248.82 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet STP2HNC60 Datasheet
Additional preview pages of the STP2HNC60 datasheet.

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Full PDF Text Transcription

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N-CHANNEL 600V - 4Ω - 2.2A TO-220/TO-220FP PowerMesh™II MOSFET TYPE STP2HNC60 STP2HNC60FP s s s s s STP2HNC60 STP2HNC60FP VDSS 600 V 600 V RDS(on) <5Ω <5Ω ID 2.2 A 2.2 A TYPICAL RDS(on) = 4 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED TO-220 3 1 2 1 2 3 DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.
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