STP2HNC60 Datasheet | STMicroelectronics

N-CHANNEL 600V - 4Ω - 2.2A TO-220/TO-220FP Power Mesh™II MOSFET TYPE STP2HNC60 STP2HNC60FP s s s s s STP2HNC60 STP2HNC60FP VDSS 600 V 600 V RDS(on) <5Ω <5Ω ID 2.2 A 2.2 A TYPICAL RDS(on) = 4 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED TO-220 3 1 2 1 2 DESCRIPTION The Power MESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron- area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER s TO-220FP INTERNAL SCHEMATIC...