STMicroelectronics STP2N60
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s CHOPPER REGULATORS, CONVERTERS, MOTOR CONTROL, LIGHTING FOR INDUSTRIAL AND CONSUMER ENVIRONMENT ISOWATT220 INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol Parameter STP2N60 VD S V DG R V GS ID ID ID M(●) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 kΩ ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o o Value STP2N60FI 600 600 ± 20 2.9 1.7 11 70 0.56 -65 to 150 150 2.2 1.3 11 35 0.28 2000 Unit V V V A A A W W/o C V o o C C (●) Pulse width limited by safe operating area December 1996 1/10 STP2N60/FI THERMAL DATA TO-220 R thj-cas e Rthj- amb Rt hc- sin k Tl Thermal Resistance Junction-case Max 1.78 62.5 0.5 300 ISOWATT220 3.57 o o o C/W...