STMicroelectronics STP2NK100Z
This high-voltage device is a Zener-protected N-channel Power MOSFET developed S(3) using the SuperMESH technology by STMicroelectronics, an optimization of the well- AM01476v1_tab established PowerMESH.STP2NK100Z Specifications
- Package : TO-220
- Mount Type : Through Hole
- Breakdown Voltage : 1kV
- Threshold Voltage : 3.75V
- RDS(on) Max : 8.5Ω
- Input Capacitance : 499pF
- Terminals : 3
- Max Power Dissipation : 70W
- Max Operating Temp : 150°C
- Min Operating Temp : -55°C
Source:
Octopart
| Part No. | STP2NK100Z |
|---|---|
| Datasheet | STP2NK100Z Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
TAB TO-220 1 23 D(2, TAB) Order code VDS STP2NK100Z 1000 V● 100% avalanche tested
● Gate charge minimized
● Very low intrinsic capacitance
● Zener-protected
APPLICATIONS
RDS(on) max. 8.5 Ω ID 1.85 A● Switching applications G(1)
DESCRIPTION
In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. Product status link STP2NK100Z Product summary Order code STP2NK100Z Marking 2NK100Z Package TO-220 Packing Tube DS14346 - Rev 1 - June 2023 For further information contact your local STMicroelectronics sales office. STP2NK100Z Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C ESD Gate-source, human body model (R = 1.5 kΩ, C = 100 pF) dv/dt(2) Peak diode recovery voltage slope Tstg Storage temperature range TJ Operating junction temperature range 1.
