STMicroelectronics STP2NK60Z
N-channel Power MOSFET
GENERAL FEATURES
TYPE VDSS RDS(on) ID Pw STF2NK60Z STQ2NK60ZR-AP STP2NK60Z STD2NK60Z-1 600 V 600 V 600 V 600 V <8Ω <8Ω <8Ω <8Ω 1.4 A 0.4 A 1.4 A 1.4 A 20 3W 45 W 45 W s TYPICAL RDS(on) = 7.2 Ω s EXTREMELY HIGH dv/dt CAPABILITY s ESD IMPROVED CAPABILITY s 100% AVALANCHE TESTED s NEW HIGH VOLTAGE BENCHMARK s GATE CHARGE MINIMIZEDDESCRIPTION
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. Figure 1: Package TO-92 (Ammopack) 3 2 1 TO-220 3 2 1 IPAK 3 2 1 TO-220FP Figure 2: Inter