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STP30N10F7 - N-CHANNEL POWER MOSFET

General Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Key Features

  • Order code STP30N10F7 VDS 100 V RDS(on) max. 0.024 Ω ID 32 A PTOT 50 W.
  • Among the lowest RDS(on) on the market.
  • Excellent figure of merit (FOM ).
  • Low Crss /Ciss ratio for EMI immunity.
  • High avalanche ruggedness.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STP30N10F7 N-channel 100 V, 0.02 Ω typ., 32 A STripFET™ F7 Power MOSFET in a TO-220 package Datasheet - production data Figure 1: Internal schematic diagram D(2, TAB) G(1) Features Order code STP30N10F7 VDS 100 V RDS(on) max. 0.024 Ω ID 32 A PTOT 50 W  Among the lowest RDS(on) on the market  Excellent figure of merit (FOM )  Low Crss /Ciss ratio for EMI immunity  High avalanche ruggedness Applications  Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.