STMicroelectronics STP30N10F7
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.| Part No. | STP30N10F7 |
|---|---|
| Datasheet | STP30N10F7 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
FEATURES
Order code STP30N10F7 VDS 100 V RDS(on) max. 0.024 Ω ID 32 A PTOT 50 W● Among the lowest RDS(on) on the market
● Excellent figure of merit (FOM )
● Low Crss /Ciss ratio for EMI immunity
● High avalanche ruggedness
APPLICATIONS
● Switching applicationsDESCRIPTION
S(3) Order code STP30N10F7 AM01475v1_Tab Table 1: Device summary Marking Package 30N10F7 TO-220 Packing Tube February 2016 DocID028799 Rev 1 This is information on a product in full production. 1/13 Contents Contents STP30N10F7 1 Electrical ratings............
