STP30N10F7 Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. S(3) Order code STP30N10F7 AM01475v1_Tab Table 1: Device summary Marking Package 30N10F7 TO-220 Packing Tube February 2016 DocID028799 Rev 1 This is information on a product in...
STP30N10F7 Key Features
- Among the lowest RDS(on) on the market
- Excellent figure of merit (FOM )
- Low Crss /Ciss ratio for EMI immunity
- High avalanche ruggedness