STMicroelectronics STP30NE03LFP
This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.| Part No. | STP30NE03LFP |
|---|---|
| Datasheet | STP30NE03LFP Download |
| Manufacturer |  STMicroelectronics |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
APPLICATIONS
s DC MOTOR CONTROL s DC-DC & DC-AC CONVERTERS s SYNCHRONOUS RECTIFICATION TO-220 TO-220FP INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symb ol Parameter Value ST P30NE03L V DS V DGR V GS ID ID I DM (● ) P tot V ISO T s tg Tj June 1999 Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Insulation W ithstand Voltage (DC) Storage T emperature Max. O perating Junct ion T emperature o o o Unit STP30NE03L FP 30 30 ± 20 V V V 17 12 68 25 0.17 2000 A A A W W/ oC V o o 30 21 120 70 0.47 -65 to 175 175 C C 1/9 (●) Pulse width limited by safe operating area STP30NE03L/FP THERMAL DATA TO-220 R thj -case R thj -amb R thc-sink Tl Thermal Resistance Junction-case Max 2.14 62.5 0.5 300 TO-220FP 6 o o o C/W C/W C/W o C Thermal Resistance Junction-ambient Max Thermal Resistance Case...
