STP315N10F7 Datasheet | STMicroelectronics

Automotive-grade N-channel 100 V, 2.3 mΩ typ., 180 A STrip FET™ F7 Power MOSFET in a TO-220 package - production data Features Order code STP315N10F7 VDS 100 V RDS(on)max 2.7 mΩ ID 180 A Figure 1: Internal schematic diagram D(2, TAB) G(1) S(3) Features - Designed for automotive applications and AEC-Q101 qualified - Among the lowest RDS(on) on the market - Excellent Fo M (figure of merit) - Low Crss/Ciss ratio for EMI immunity - High avalanche ruggedness Applications - Switching applications Description This N-channel Power MOSFET utilizes STrip FET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STP315N10F7 AM01475v1_Tab Table 1: Device summary Marking Package 315N10F7 TO-220 Packaging Tube August 2016 Doc ID025348 Rev...