STMicroelectronics STP33N10FI
N-CHANNEL POWER MOSFET
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) 3 2 1 TO-220 3 2 1 ISOWATT220 INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol P ar amete r VD S VDG R Drain-source Voltage (VGS = 0) Drain- gate Voltage (RGS = 20 kΩ) VGS ID ID ID M(●) Ptot Gate-source Voltage Drain Current (continuous) at T c = 25 oC Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 oC Derating Factor VISO Insulation Withstand Voltage (DC) Tstg Storage Temperature Tj Max. Operating Junction Temperature (●) Pulse width limited by safe operating area July 1993 Val ue STP33N10 ST P3 3N 10 F I 100 100 ± 20 33 18 23 12 132 132 150 45 1 0.3 2000 -65 to 175 175 Unit V V V A A A W W/oC V oC oC 1/10 STP33N10/FI THERMAL DATA Rthj-case Rthj- amb Rt hc- sin k Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose TO-220 1 ISOWATT220 3.