STMicroelectronics STP33N60M2
600V N-Channel Power MOSFET
FEATURES
123 TO-220FP TAB 1 23 I2PAK TO-220 1 23 TO-247 1 23 D(2, TAB) Order code STF33N60M2 STI33N60M2 STP33N60M2 STW33N60M2 VDS 600 V RDS(on) max. 125 mΩ● Extremely low gate charge
● Excellent output capacitance (Coss) profile
● 100% avalanche tested
● Zener-protected ID 26 A G(1)
APPLICATIONS
● Switching applications● LLC resonant, converters S(3)
DESCRIPTION
AM01476v1_tab These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters. Product status links STF33N60M2 STI33N60M2 STP33N60M2 STW33N60M2 DS9497 - Rev 4 - February 2026 For further information, contact your local STMicroelectronics sales office. STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Dr...