STMicroelectronics STP33N65M2
This device is an N-channel Power MOSFET developed using MDmesh M2 S(3) technology.FEATURES
TAB TO-220 1 23 D(2, TAB) Order code STP33N65M2 VDS 650 V RDS(on) max. 140 mΩ ID 24 A● Extremely low gate charge
● Excellent output capacitance (Coss) profile
● 100% avalanche tested
● Zener-protected
APPLICATIONS
● Switching applications G(1)DESCRIPTION
Thanks to its strip layout and an improved vertical structure, the device AM01476v1_tab exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Product status link STP33N65M2 Product summary Order code STP33N65M2 Marking 33N65M2 Package TO-220 Packing Tube DS15083 - Rev 1 - October 2025 For further information, contact your local STMicroelectronics sales office. STP33N65M2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage ID Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total pow...