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STP36N55M5 - N-CHANNEL POWER MOSFET

General Description

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure.

Key Features

  • Order codes STP36N55M5 STW36N55M5 VDSS @ RDS(on) TJmax max ID 600 V < 0.08 Ω 33 A.
  • Worldwide best RDS(on).
  • area.
  • Higher VDSS rating and high dv/dt capability.
  • Excellent switching performance.
  • 100% avalanche tested.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STP36N55M5 STW36N55M5 N-channel 550 V, 0.06 Ω typ., 33 A MDmesh™ V Power MOSFET in TO-220 and TO-247 packages Datasheet — production data Features Order codes STP36N55M5 STW36N55M5 VDSS @ RDS(on) TJmax max ID 600 V < 0.08 Ω 33 A ■ Worldwide best RDS(on) * area ■ Higher VDSS rating and high dv/dt capability ■ Excellent switching performance ■ 100% avalanche tested Applications ■ Switching applications Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure.