STP4N150 Description
These Power MOSFETs are designed using the STMicroelectronics consolidated strip-layout-based MESH OVERLAY process. The result is a product that matches or improves on the performance of parable standard parts from other manufacturers. STFW4N150, STP4N150, STW4N150 Electrical ratings 1 Electrical ratings Table.
STP4N150 Key Features
- 100% avalanche tested
- Intrinsic capacitances and Qg minimized
- High speed switching
- Fully isolated TO-3PF plastic package