STMicroelectronics STP50N06FI
N-Channel Enhancement Mode Power MOS Transistor
| Part No. | STP50N06FI |
|---|---|
| Datasheet | STP50N06FI Download |
| Manufacturer |  STMicroelectronics |
| Description | N-Channel Enhancement Mode Power MOS Transistor |
| Buy | Stock & Price |
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)ABSOLUTE MAXIMUM RATINGS
Symbol V DS V DGR V GS ID ID I DM (●) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o w w w Parameter t a .D S a e h INTERNAL SCHEMATIC DIAGRAM U 4 t e 1 2 .c m o 1 3 2 ISOWATT220 Value STP50N06 60 60 ± 20 50 35 200 150 1 -65 to 175 175 27 19 200 45 0.3 2000 STP50N06FI Unit V V V A A A (●) Pulse width limited by safe operating area July 1993 w w w .D a t a Sh ee U 4 t W/o C V o o W m o .c C C 1/10 STP50N06/FI THERMAL DATA TO-220 R th...
