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STP5NK65Z - N-channel Power MOSFET

Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

Features

  • OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and costeffective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/9 STP5NK65Z EL.

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Datasheet Details

Part number STP5NK65Z
Manufacturer STMicroelectronics
File Size 226.05 KB
Description N-channel Power MOSFET
Datasheet download datasheet STP5NK65Z Datasheet
Additional preview pages of the STP5NK65Z datasheet.

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Full PDF Text Transcription

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N-CHANNEL 650V - 1.5Ω - 5A TO-220 Zener-Protected SuperMESH™Power MOSFET TYPE STP5NK65Z s STP5NK65Z VDSS 650 V RDS(on) < 1.8 Ω ID 5A Pw 85 W TYPICAL RDS(on) = 1.5 Ω s EXTREMELY HIGH dv/dt CAPABILITY s IMPROVED ESD CAPABILITY s 100% AVALANCHE RATED s GATE CHARGE MINIMIZED www.DataSheet4U.com s VERY LOW INTRINSIC CAPACITANCES s VERY GOOD MANUFACTURING REPEATIBILITY TO-220 DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
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