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STP5NK65Z Datasheet N-channel Power MOSFET

Manufacturer: STMicroelectronics

Overview: N-CHANNEL 650V - 1.5Ω - 5A TO-220 Zener-Protected SuperMESH™Power MOSFET TYPE STP5NK65Z s STP5NK65Z VDSS 650 V RDS(on) < 1.8 Ω ID 5A Pw 85 W TYPICAL RDS(on) = 1.5 Ω s EXTREMELY HIGH dv/dt CAPABILITY s IMPROVED ESD CAPABILITY s 100% AVALANCHE RATED s GATE CHARGE MINIMIZED www.DataSheet4U.

General Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

Key Features

  • OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and costeffective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/9 STP5NK65Z EL.

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