STMicroelectronics STP75NE75
This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.| Part No. | STP75NE75 |
|---|---|
| Datasheet | STP75NE75 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL MOSFET |
| Buy | Stock & Price |
DESCRIPTION
APPLICATIONS
s SOLENOID AND RELAY DRIVERS s DC MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC CONVERTERS s AUTOMOTIVE ENVIRONMENT TO-220 TO-220FP INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol V DS V DGR V GS ID ID I DM (● ) P tot V ISO dv/dt Ts tg Tj May 1999 Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (RGS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at T c = 25 oC Derating F actor Insulation Withstand Voltage (DC) Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature 75 53 300 160 1.06 7 -65 to 175 175 ( 1) ISD ≤75 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Value STP75NE75 STP75NE75FP 75 75 ± 20 40 28 160 50 0.37 2000 Un it V V V A A A W W /o C V V/ns o o C C 1/9 (●) Pulse width limited by safe operating area STP75NE75/FP THERMAL DATA TO-220 R thj -case R thj -amb R thc-sink Tl Thermal Resistanc...
