STP7N80K5 Datasheet | STMicroelectronics

STD7N80K5, STP7N80K5, STU7N80K5 N-channel 800 V, 0.95 Ω typ., 6 A MDmesh K5 Power MOSFETs in DPAK, TO-220 and IPAK packages TAB 3 DPAK 1 TO-220 1 23 IPAK D(2, TAB) G(1) S(3) AM01476v1_tab Features Order code STD7N80K5 800 V STU7N80K5 - Industry’s lowest RDS(on) x area - Industry’s best Fo M (figure of merit) - Ultra-low gate charge - 100% avalanche tested - Zener-protected RDS(on) max 1.2 Ω 6A Applications - Switching applications Description These very high voltage N-channel Power MOSFETs are designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Product status link STD7N80K5 STP7N80K5 STU7N80K5 DS9173...