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STP80N10F7 Datasheet N-channel Power MOSFET

Manufacturer: STMicroelectronics

Overview: STD80N10F7, STF80N10F7, STH80N10F7-2, STP80N10F7 N-channel 100 V, 0.008 Ω typ.

General Description

th These devices utilize the 7 generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.

The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

'3$.72DQG 72)3 QR7$% +3$. $0Y Order codes STD80N10F7 STF80N10F7 STH80N10F7-2 STP80N10F7 Table 1.

Key Features

  • Order codes VDS @ RDS(on) TJmax max STD80N10F7 0.01 Ω STF80N10F7 0.01 Ω 100 V STH80N10F7-2 0.0095 Ω STP80N10F7 0.01 Ω ID 70 A 40 A 80 A PTOT 85 W 30 W 110 W.
  • Extremely low gate charge.
  • Ultra low on-resistance.
  • Low gate input resistance Figure 1. Internal schematic diagram ' 7$% ' 7$% .
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