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STP80N10F7 - N-Channel Power MOSFET

General Description

These devices utilize the 7 generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.

The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

Key Features

  • Order codes VDS @ RDS(on) TJmax max STD80N10F7 0.01 Ω STF80N10F7 0.01 Ω 100 V STH80N10F7-2 0.0095 Ω STP80N10F7 0.01 Ω ID 70 A 40 A 80 A PTOT 85 W 30 W 110 W.
  • Extremely low gate charge.
  • Ultra low on-resistance.
  • Low gate input resistance Figure 1. Internal schematic diagram ' 7$% ' 7$% .
  •  6  .
  •  6  .

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STD80N10F7, STF80N10F7, STH80N10F7-2, STP80N10F7 N-channel 100 V, 0.008 Ω typ., 80 A STripFET™ VII DeepGATE™ 2 Power MOSFETs in DPAK, TO-220FP, H PAK-2 and TO-220 Datasheet - production data TAB 3 1 DPAK TAB 2 3 1 H2PAK-2 3 2 1 TO-220FP TAB 3 2 1 TO-220 Features Order codes VDS @ RDS(on) TJmax max STD80N10F7 0.01 Ω STF80N10F7 0.01 Ω 100 V STH80N10F7-2 0.0095 Ω STP80N10F7 0.01 Ω ID 70 A 40 A 80 A PTOT 85 W 30 W 110 W • Extremely low gate charge • Ultra low on-resistance • Low gate input resistance Figure 1. Internal schematic diagram ' 7$% ' 7$% *  6  *  6  Applications • Switching applications Description th These devices utilize the 7 generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.