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STP80NF03L - N-CHANNEL POWER MOSFET

General Description

c based process.

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STP80NF03L N-CHANNEL 30V - 0.004 Ω - 80A TO-220 STripFET™ II MOSFET TYPE VDSS RDS(on) ID STP80NF03L 30 V < 0.0045 Ω 80 A s TYPICAL RDS(on) = 0.004 Ω s EXCEPTIONAL dv/dt CAPABILITY s 100% AVALANCHE TESTED s LOW THRESHOLD DRIVE 3 2 1 TO-220 DESCRIPTION t(s) This Power MOSFET is the latest development of ST- Microelectronics unique “Single Feature Size™” strip- c based process. The resulting transistor shows exu tremely high packing density for low on-resistance, d rugged avalance characteristics and less critical ro alignment steps therefore a remarkable manufacturP ing reproducibility.