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STP8NM50FP - N-CHANNEL POWER MOSFET

Download the STP8NM50FP datasheet PDF. This datasheet also covers the STP8NM50 variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

bThe MDmesh™ is a new revolutionary Power - OMOSFET technology that associates the multiple )drain process with the company’s PowerMESH™ t(shorizontal layout.

ucdv/dt and excellent avalanche characteristics.

Key Features

  • Type VDSS (@Tjmax) RDS(on) ID STP8NM50 t(s)STP8NM50FP 550V 550V.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STP8NM50_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
STP8NM50 N - CHANNEL POWER MOSFET ST Microelectronics
STP8NM50N N-Channel MOSFET INCHANGE
STP8NM60 N-Channel MOSFET ST Microelectronics
STP8NM60 N-Channel MOSFET INCHANGE
STP8NM60FP N-Channel MOSFET INCHANGE

Other Datasheets by STMicroelectronics

Part Number Description
STP8NM50N N-channel Power MOSFET
STP8NM60D N-CHANNEL Power MOSFET
STP8NM60FP N-CHANNEL MOSFET
STP8NM60N N-channel Power MOSFET
STP8NM60ND Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STP8NM50 STP8NM50FP N-channel 550V @ Tjmax - 0.7Ω - 8A - TO-220 - TO-220FP MDmesh™ Power MOSFET General features Type VDSS (@Tjmax) RDS(on) ID STP8NM50 t(s)STP8NM50FP 550V 550V <0.8Ω <0.8Ω 8A 8A (1) c1. Limited only by maximum temperature allowed du■ 100% avalanche tested ro■ High dv/dt and avalanche capabilities P■ Low gate input resistance te■ Low input capacitance and gate charge soleDescription bThe MDmesh™ is a new revolutionary Power - OMOSFET technology that associates the multiple )drain process with the company’s PowerMESH™ t(shorizontal layout. The resulting product has an outstanding low on-resistance, impressively high ucdv/dt and excellent avalanche characteristics.