STP8NS25 Datasheet PDF | STMicroelectronics

STMicroelectronics STP8NS25

The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for lighting applications.

Part No.	STP8NS25
Datasheet	STP8NS25 Download
Manufacturer	STMicroelectronics
Description	N - CHANNEL POWER MOSFET
Buy	Stock & Price

DESCRIPTION

Using the latest high voltage MESH OVERLAY ™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance.

APPLICATIONS

s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-DC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT TO-220 TO-220FP INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt (1) VISO Tstg Tj Parameter STP8NS25 Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature –65 to 150 150 (1) ISD≤ 8A, di/dt≤300 A/µs, VDD≤ V (BR)DSS, Tj ≤TjMAX (*)Limited only by maximum temperature allowed Value STP8NS25FP 250 250 ± 20 8 5 32 80 0.64 5 2000 8(*) 5(*...