STPS40L40CT Datasheet | STMicroelectronics

® STPS40L40CT/CW LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCTS CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) Features AND BENEFITS LOW FORWARD VOLTAGE DROP MEANING VERY SMALL CONDUCTION LOSSES LOW DYNAMIC LOSSES AS A RESULT OF THE SCHOTTKY BARRIER AVALANCHE RATED DESCRIPTION Dual center tap Schottky barrier rectifier designed for high frequency Switched Mode Power Supplies and DC to DC converters. Packaged in TO-220AB and TO-247 this device is intended for use in low voltage, high frequency inverters, free-wheeling and polarity protection applications. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) IFSM IRRM IRSM Tstg Tj d V/dt - : RMS forward current Average forward current Surge non repetitive forward current Repetitive peak reverse current Non repetitive peak reverse current Storage temperature range Maximum operating junction temperature - Critical rate of rise of reverse voltage Tc = 130°C δ = 0.5 Parameter Repetitive peak reverse voltage 2 x 20 A A1 K A2 40 V 150 °C 0.49 V A1 A2 A2 K A1 TO-220AB STPS40L40CT TO-247 STPS40L40CW Value 40 30 Per diode Per device 20 40 230 2 3 - 65 to + 150 150 10000 Unit V A A A A A °C °C V/µs tp = 10 ms Sinusoidal tp = 2 µs square F = 1k Hz tp = 100 µs square d Ptot 1 < thermal runaway condition for a diode on its own heatsink Rth(j- a) d Tj 1/5 July 1999 - Ed: 6A STPS40L40CT/CW THERMAL RESISTANCES Symbol Rth (j-c) Rth(c) Junction to case Parameter Per diode Total Coupling Value 1.5 0.8 0.1 Unit °C/W °C/W When the diodes 1 and 2 are used simultaneously : ∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR - Parameter Reverse leakage current Forward voltage drop Tests Conditions Tj = 25°C Tj = 100°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Pulse test : - tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation : P = 0.28 x IF(AV) + 0.0105 IF2(RMS) IF = 20 A IF = 20 A IF = 40 A IF = 40 A 0.6...