Datasheet4U Logo Datasheet4U.com

STPST10H100-Y - Automotive 100V - 10A power Schottky trench diode

General Description

This 10 A, 100 V rectifier is based on ST trench technology that achieves the best-inclass VF/IR trade-off for a given silicon surface.

Key Features

  • AEC-Q101 qualified.
  • PPAP capable.
  • Low forward voltage drop.
  • Low recovery charges.
  • Reduces conduction, reverse and switching losses.
  • 100% Avalanche tested in production.
  • Operating Tj from -40 °C to +175 °C.
  • Flat packages.
  • ECOPACK2 compliant.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STPS0520M LOW DROP POWER SCHOTTKY RECTIFIER ST Microelectronics
STPS0520Z SCHOTTKY RECTIFIERS ST Microelectronics
STPS0530Z SCHOTTKY RECTIFIERS ST Microelectronics
STPS0540Z (STPS0540Z / STPS0560Z) SCHOTTKY RECTIFIER ST Microelectronics
STPS0560Z SCHOTTKY RECTIFIER ST Microelectronics

Other Datasheets by STMicroelectronics

Part Number Description
STPST10H100 power Schottky trench diode
STPST10H100SB power Schottky trench rectifier
STPST10H100SB-Y Schottky trench rectifier
STPST12H100 power Schottky trench rectifier
STPST15H100SB power Schottky trench rectifier

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Product label Product status link STPST10H100-Y Product summary IF(AV) 10 A VRRM 100 V Tj (max.) 175 °C VF (typ.) 0.565 V STPST10H100-Y Datasheet Automotive 100 V - 10 A power Schottky trench diode Features • AEC-Q101 qualified • PPAP capable • Low forward voltage drop • Low recovery charges • Reduces conduction, reverse and switching losses • 100% Avalanche tested in production • Operating Tj from -40 °C to +175 °C • Flat packages • ECOPACK2 compliant Applications • Automotive LED lighting • Flyback topology • On-board DC/DC converter • ECU power supply Description This 10 A, 100 V rectifier is based on ST trench technology that achieves the best-inclass VF/IR trade-off for a given silicon surface.