STMicroelectronics STQ2NK60ZR-AP
N-CHANNEL Power MOSFET
GENERAL FEATURES
TYPE STQ2NK60ZR-AP STP2NK60Z STD2NK60Z-1 s s s s s s Figure 1: Package ID 0.4 A 1.4 A 1.4 A Pw 3W 45 W 45 W <8Ω <8Ω <8Ω VDSS 600 V 600 V 600 V RDS(on) TYPICAL RDS(on) = 7.2 Ω EXTREMELY HIGH dv/dt CAPABILITY ESD IMPROVED CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED TO-92 (Ammopack) TO-220 3 1 2 3DESCRIPTION
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. 2 1 IPAK Figure 2: Internal Schematic DiagramAPPLICATIONS
s LOW POWER BATTERY CHARGERS s SWITH MODE LOW POWER SUPPLIES(SMPS) s LOW POWER, BALLAST, CFL (COMPACT FLUORESCENT LAMPS) Table 2: Order Codes SALES TYPE STQ2NK60ZR-AP STP2NK60Z STD2NK60Z-1 MARKING Q2NK60ZR P2NK60Z D2NK60Z PACKAGE TO-92 TO-220 IPAK PACKAGING AMMOPAK TUBE TUBE Rev.