STMicroelectronics STQ3N45K3-AP
N-channel Power MOSFET
| Part No. | STQ3N45K3-AP |
|---|---|
| Datasheet | STQ3N45K3-AP Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
3 2 1 TO-92 Figure 1. Internal schematic diagram ' * 6 AM01476v1 Order code VDSS STQ3N45K3-AP 450 V RDS(on) max <4Ω ID Pw 0.6 A 3 W● 100% avalanche tested
● Extremely high dv/dt capability
● Gate charge minimized
● Very low intrinsic capacitance
● Improved diode reverse recovery characteristics
● Zener-protected
APPLICATIONS
● Switching applicationsDESCRIPTION
This SuperMESH3™ Power MOSFET is the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. This device boasts an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications. Order code STQ3N45K3-AP Table 1. Device summary Marking Package 3N45K3 TO-92 June 2013 This is information on a product in full production. DocID024887 Rev 1 Packaging Ammopak 1/14 Contents Contents STQ3N45K3-AP 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
