STMicroelectronics STRH40P10
The STRH40P10 is a P-channel Power MOSFET developed with the Rad-Hard STripFET technology in TO-254AA hermetic package and qualified as per ESCC detail specification No. Designed for satellite application, it sustains high level of total ionized dose (TID) and immunity to heavy ions effects.| Part No. | STRH40P10 |
|---|---|
| Datasheet | STRH40P10 Download |
| Manufacturer |  STMicroelectronics |
| Description | 100V 34A P-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
VDS 100 V ID 34 A RDS(on) typ. 60 mΩ Qg 162 nC● Fast switching
● 100% avalanche tested
● Hermetic package
● 100 krad
● SEE radiation hardened
DESCRIPTION
5205/025. In case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence. Device summary Part number STRH40P10HY1 STRH40P10HYG STRH40P10HYT Product summary Quality level ESCC part number Package Engineering - model ESCC flight 5205/025 TO-254AA Note: See Table 8. Ordering information. Lead finish Gold Solder dip Radiation level - 100 krad 100 krad DS7072 - Rev 18 - April 2024 For further information contact your local STMicroelectronics sales office. 1 Note: STRH40P10 Electrical ratings Electrical ratings For P-channel MOSFET voltage and current polarity is reversed. Table 1. Absolute maximum ratings Symbol Parameter VDS(1) Drain-source voltage (VGS = 0) VGS(2) Gate-source voltage Drain current (continuous) at Tcase = 25 °C ID(3) Drain current (continuous) at Tcase = 100 °C...
