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STS8DN3LLH5 - Power MOSFETs

General Description

This STripFET™V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class FOM.

Table 1.

Key Features

  • Type STS8DN3LLH5 VDSS 30 V RDS(on) max < 0.019 Ω ID 10 A (1) 1. The value is rated according Rthj-pcb.
  • RDS(on).
  • Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge High avalanche ruggedness Low gate drive power losses SO-8.

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STS8DN3LLH5 Dual N-channel 30 V, 0.0155 Ω, 10 A, SO-8 STripFET™ V Power MOSFET Features Type STS8DN3LLH5 VDSS 30 V RDS(on) max < 0.019 Ω ID 10 A (1) 1. The value is rated according Rthj-pcb ■ ■ ■ ■ ■ RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge High avalanche ruggedness Low gate drive power losses SO-8 Application ■ Switching applications Figure 1. Internal schematic diagram Description This STripFET™V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class FOM. www.DataSheet4U.com Table 1.