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STT5N2VH5 - N-channel MOSFET

General Description

This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™V technology.

The device has been optimized to achieve very low on-state resistance, contributing to a FOM that is among the best in its class.

Table 1.

Key Features

  • 4 5 6 3 2 1 SOT23-6L Order code VDS RDS(on) max ID PTOT STT5N2VH5 20 V 0.04 Ω (VGS=2.5 V) 5 A 1.6 W.
  • Very low profile package.
  • Conduction losses reduced.
  • Switching losses reduced.
  • 2.5 V gate drive.
  • Very low threshold device Figure 1. Internal schematic diagram.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STT5N2VH5 N-channel 20 V, 0.025 Ω typ., 5 A STripFET™ V Power MOSFET in a SOT23-6L package Datasheet — production data Features 4 5 6 3 2 1 SOT23-6L Order code VDS RDS(on) max ID PTOT STT5N2VH5 20 V 0.04 Ω (VGS=2.5 V) 5 A 1.6 W • Very low profile package • Conduction losses reduced • Switching losses reduced • 2.5 V gate drive • Very low threshold device Figure 1. Internal schematic diagram Applications • Switching applications Description This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™V technology. The device has been optimized to achieve very low on-state resistance, contributing to a FOM that is among the best in its class. Order code STT5N2VH5 Table 1.