Datasheet Summary
N-channel 20 V, 0.025 Ω typ., 5 A STripFET™ V Power MOSFET in a SOT23-6L package
- production data
Features
4 5 6
2 1
SOT23-6L
Order code VDS RDS(on) max
ID PTOT
STT5N2VH5 20 V 0.04 Ω (VGS=2.5 V) 5 A 1.6 W
- Very low profile package
- Conduction losses reduced
- Switching losses reduced
- 2.5 V gate drive
- Very low threshold device
Figure 1. Internal schematic diagram
Applications
- Switching applications
Description
This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™V technology. The device has been optimized to achieve very low on-state resistance, contributing to a FOM that is among the best in its class.
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