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STT7P2UH7 - P-CHANNEL POWER MOSFET

General Description

This P-channel Power MOSFET utilizes the STripFET H7 technology with a trench gate structure combined with extremely low onresistance.

The device also offers ultra-low capacitances for higher switching frequency operations.

Key Features

  • Order code STT7P2UH7 VDS 20 V RDS(on) max 0.0225 Ω @ 4.5 V ID 7A For the P-channel Power MOSFET the actual polarity of the voltages and the current must be reversed. October 2014 DocID025142 Rev 3 This is information on a product in full production. 1/13 www. st. com Contents Contents STT7P2UH7 1 Electrical ratings.

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Full PDF Text Transcription for STT7P2UH7 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for STT7P2UH7. For precise diagrams, and layout, please refer to the original PDF.

STT7P2UH7 P-channel 20 V, 0.0195 Ω typ., 7 A STripFET™ H7 Power MOSFET in a SOT23-6L package Datasheet - production data SOT23-6L Figure 1: Internal schematic diagram  V...

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et - production data SOT23-6L Figure 1: Internal schematic diagram  Very low on-resistance  Very low capacitance and gate charge  High avalanche ruggedness Applications  Switching applications Description This P-channel Power MOSFET utilizes the STripFET H7 technology with a trench gate structure combined with extremely low onresistance. The device also offers ultra-low capacitances for higher switching frequency operations. Table 1: Device summary Order code Marking Package Packaging STT7P2UH7 7L2U SOT23-6L Tape and reel Features Order code STT7P2UH7 VDS 20 V RDS(on) max 0.0225 Ω @ 4.

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